大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究(第1報) : 成膜速度および膜構造の検討

概要

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Using atmospheric pressure plasma CVD (chemical vapor deposition) technique, hydrogenated amorphous Si_1-xCx (a-Si_1-xCx : H) films were deposited with extremely high deposition rate. The films were prepared on Si(001) wafers in atmospheric pressure VHF (very high frequency) plasma of gas mixtures containing He, H_2,SiH_4 and CH_4. Film properties (structure, density and composition of a-Si_1-xCx : H) were studied as a function of CH_4 concentration by TEM (transmission electron microscopy), AES (Auger electron spectroscopy) and IR (infrared) absorption spectroscopy. Relation between IR absorption spectra and chemical resistance of the films to 15% KOH solution was also investigated. The maximum deposition rate was 50nm/s, which was more than 10 times faster than that achieved by the conventional plasma CVD technique. It was found that CH_4 molecules contributed to the film growth when SiH_4 was co-existed with SiH_4 to CH_4 concentration ratio of 1/10. In this case, C to Si composition ratio in the film was 2 (a-Si_0.33C_0.67 : H). The density of a-Si_1-xCx : H film was about 1.5g/cm^3 being less than half of the crystalline value of SiC. The a-Si_0.33C_0.67 : H film was not etched by KOH solution, which was supported by IR analysis of the Si-C stretching vibration mode.
公益社団法人精密工学会の論文
2000-06-05