大気圧プラズマCVDシステムにおけるプロセス雰囲気の清浄化

概要

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In the atmospheric pressure plasma CVD system, improvement of the process environment by utilizing the reactivity between SiH_4 and H_20 was examined. The cleaning gas containing He and SiH_4 was circulated by the gas circulation system in heated condition, and H_20 which remained in the process atmosphere was measured by APIMS (Atmospheric Pressure Ionization Mass Spectrometer). Hydrogenated amorphous silicon (a-Si : H) films were deposiCed by the atmospheric pressure plasma CVD before and after the SiH_4 circulation cleaning. In order to evaluate the effectiveness of the SiH_4 circulation cleaning, contaminations such as O, N and C were analyzed by SIMS (Secondary Ion Mass Spectroscopy). Furthermore, the photoconductiviy and the dark conductivity were compared. The results showed that the H_20 concentration in the process atmosphere drastically decreased by the SiH_4 circulation, and the O content in the a-Si : H film decreased similarly. The O content in the film after the SiH_4 circulation cleaning was 5×10^<18> /cm^3 which value was as same as or less than that by the conventional plasma CVD technique. ' The dark conductivity decreased, and the electrical property was improved. It was because the O content in the film decreased by the SiH_4 circulation cleaning.
公益社団法人精密工学会の論文
2000-11-05