大気圧プラズマCVDによる超高速形成アモルファスSiを発電層とした薄膜太陽電池の基礎特性

概要

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The atmospheric pressure plasma CVD (AP-PCVD) process was applied to the fabrication of intrinsic layer (i-layer) of single-junction amorphous silicon (a-Si) solar cells. The i-layers were prepared with extremely high deposition rates in atmospheric pressure VHF (very high frequency) plasma of gas mixtures containing He, H_2 and SiH_4. The other layers were deposited by the conventional low-pressure techniques. The I-V characteristics and the spectral sensitivity under AM-1.5, 100mW/cm^2 illumination, and the I-V characteristics in the dark state of the solar cells were investigated as functions of the deposition parameters of the i-layers such as input power, hydrogen concentration (H_2/SiH_4) and Substrate temperature. The energy conversion efficiency (η) of the solar cell was strongly affected by the optical absorption characteristic of the i-layer. η of 6.6% was achieved when the deposition rate of i-layer was 168nm/s. At this deposition rate, it might be possible by scanning substrate to form i-layer of the thickness of 0.3μm on the substrate of 1m×1m area in 350 seconds, which was nearly 10 times faster than that by the conventional low-pressure plasma CVD technique.
社団法人精密工学会の論文
2004-04-05