大気圧プラズマCVD法によるSiN_xの成膜特性

概要

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Silicon nitride (SiN_x) films were fabricated with extremely high deposition rate using the atmospheric pressure plasma CVD technique. The films were prepared on Si(001) wafers at atmospheric pressure in a very high frequency (150MHz) plasma of gas mixtures containing He, H_2, SiH_4 and N_2 or NH_3. Film properties (structure and composition of SiN_x) were studied as a function of each deposition parameter by Fourier transformation infrared (FTIR) absorption spectroscopy and Auger electron spectroscopy. The maximum deposition rate was 120nm/s, which was 40 times as fast as that achieved by the conventional plasma CVD technique. It was found that SiN_x films with uniform structure could be deposited using NH_3 as the N source gas. When N_2 was used, however, the composition of the film changed in the normal direction of the surface.
社団法人精密工学会の論文
2004-02-05