超純水・高速せん断流による洗浄法の開発(第2報) : 超純水・高速せん断流によるCu除去メカニズムの研究

概要

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We notified that Cu concentration on the Si substrate surface could be reduced to less than 2.4×10^9 atoms/cm^2 by the cleaning method using high-speed shear flow of ultrapure water. But the mechanism of Cu removal in this cleaning method was not clarified. In this study, we have attempted the clarification of Cu removal mechanism by the observation and analysis of the Si substrate surface after the cleaning using high-speed shear flow of ultrapure water and SPM (sulfuric acid-hydrogen peroxide mixture) cleaning. In consequence, we showed that a lot of bosses were not observed on the Si substrate surface contaminated by Cu after the cleaning using high-speed shear flow of ultrapure water though after SPM cleaning. And we supposed the reasons about removing Cu from Si substrate and not forming a lot of bosses on the Si substrate surface by Pourbaix diagram for Cu-H_2O system.
社団法人精密工学会の論文
2006-04-05