Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-09-15

著者

• Lee Won-mo

  Nano-soi Process Laboratory Hanyang University

• Paik U

  Department Of Ceramic Engineering Hanyang University

• Paik Ungyu

  Department Of Ceramic Engineering Hanyang University

• Park J‐g

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-SOI Process Laboratory, Hanyang University

• KATOH Takeo

  Nano-SOI Process Laboratory, Hanyang University

• Jeon H

  Hanyang Univ. Seoul Kor

• Park Jea-gun

  Nano-soi Process Laboratory Hanyang University

• JEON Hyeongtag

  Department of Materials Science and Engineering, Hanyang University

• Park Jea-gun

  Advanced Semiconductor Material And Device Development Center Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

• Katoh Takeo

  Nano-soi Process Laboratory Hanyang University

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• Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
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• Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
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• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation
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