Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Paik Ungyu

  Department Of Ceramic Engineering Hanyang University

• Park Jea-gun

  Nano-SOI Process Laboratory, Hanyang University

• KIM Suk-Goo

  Nano-SOI Process Laboratory, Department of Electrical and Computer Engineering, Hanyang University

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• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

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