Paik Ungyu | Department Of Ceramic Engineering Hanyang University
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概要
関連著者
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Paik Ungyu
Department Of Ceramic Engineering Hanyang University
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Park Jea-gun
Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University
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Katoh Takeo
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Nano-SOI Process Laboratory, Hanyang University
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Park Jea-gun
Advanced Semiconductor Material And Device Development Center Hanyang University
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Kang Hyun-goo
Nano-soi Process Laboratory Hanyang University
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Paik U
Department Of Ceramic Engineering Hanyang University
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Park J‐g
Nano-soi Process Laboratory Hanyang University
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KATOH Takeo
Nano-SOI Process Laboratory, Hanyang University
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KIM Dae-Hyeong
KCTech
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Kim S‐j
Department Of Ceramic Engineering Hanyang University
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Kang H‐g
Nano-soi Process Laboratory Hanyang University
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Kim S‐k
Hanyang Univ. Seoul Kor
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Kim Sang-kyun
Department Of Ceramic Engineering Hanyang University
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KANG Hyun-Goo
Nano-SOI Process Laboratory, Hanyang University
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KIM Sang-Kyun
Department of Electronic Engineering, Inha University
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Park Jea-gun
Nano-soi Process Laboratory Hanyang University
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Kim Dae-hyung
Kctech
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Park Hyung-soon
Hynix Semiconductor Inc.
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Kang Hyun‐goo
Hanyang Univ. Seoul Kor
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Kim Sung-jun
Nano-soi Process Laboratory Hanyang University
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Lee Won-mo
Nano-soi Process Laboratory Hanyang University
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Kim Dae-Hyeong
KCTech, 271-14 Kyeruk-Ri, Miyang-Myon, Anseong-Si, Kyongki-Do, Korea
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Kim Sung-jun
Department Of Ceramic Engineering Hanyang University
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Oh Seong-geun
Department Of Chemical Engineering Hanyang University
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Yoon Phil-won
Department Of Ceramic Engineering Hanyang University
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Sohn Hyung-min
Department Of Ceramic Engineering Hanyang University
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KIM Suk-Goo
Nano-SOI Process Laboratory, Department of Electrical and Computer Engineering, Hanyang University
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Paik Ungyu
Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
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Kanemoto Manabu
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Park Jea-Gun
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Park Jea-Gun
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
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Kim Sung-Jun
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Kim Sang-Kyun
Department of Ceramic Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Paik Uugyu
Department Of Ceramic Engineering Hanyang University
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JUNG Yeon-Gil
Department of Animal Science, Daegu University
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Jeon H
Hanyang Univ. Seoul Kor
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SOHN Hyung-Min
Department of Ceramic Engineering, Hanyang University
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YOON Phil-Won
Department of Ceramic Engineering, Hanyang University
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Jung Yeon-gil
Department Of Animal Science Daegu University
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Jung Yeon-gil
Department Of Ceramic Science And Engineering Changwon National University
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PARK Youg-Kook
Nano-SOI Process Laboratory, Hanyang University
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JEON Hyeongtag
Department of Materials Science and Engineering, Hanyang University
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KATOH Takeo
Advanced Semiconductor Material and Device Development Center, Hanyang University
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KIM Dae-Hyung
Department of Ceramic Engineering, Hanyang University
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PAIK Ungyu
K. C. Technol. Inc.
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PARK Jea-Gun
Advanced Semiconductor Material and Device Development Center, Hanyang University
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KIM Min-Seok
Nano-SOI Process Laboratory, Hanyang University
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KIM Jongphil
Department of Ceramic Engineering, Hanyang University
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Kim Jongphil
Department Of Ceramic Engineering Hanyang University
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Lee Myung-yoon
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Advanced Semiconductor Material & Device Development Center Hanyang University
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Kim Min-seok
Nano-soi Process Laboratory Hanyang University
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Kim Dae-Hyung
K. C. Technol. Inc., 268-1 Geruk-Ri, Miyang-Myon, Ansong-Shi, Kyonggi-Do, Korea
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Paik Ungyu
Department of Ceramic Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Park Jin-Hyung
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Kim Jun-Seok
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea
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Park Yong-Kook
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
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Lee Myung-Yoon
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Kang Hyun-Goo
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Park Hyung-Soon
Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon, Kyungki-do 467-701, Korea
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Sohn Hyung-Min
Department of Ceramic Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Kim Sang-Kyun
Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea
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Kim Dae-Hyeong
KCTech, 271-14, Kyeruk-Ri, Miyang-Myon, Anseong-Si, Kyongki-Do, Korea
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Yoon Phil-Won
Department of Ceramic Engineering, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Katoh Takeo
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Katoh Takeo
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
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Kang Hyun-Goo
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
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Lee Won-Mo
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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Kim Min-Seok
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
著作論文
- Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
- Effects of Physical Characteristics of Cerium Oxide of Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
- Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- The Stability of Nano Fwned Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics
- Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
- Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
- Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation