Park Jea-gun | Nano-SOI Process Laboratory, Hanyang University

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著作論文

Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
Effects of Physical Characteristics of Cerium Oxide of Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
Spectral Analyses on Pad Dependency of Nanotopography Impact on Oxide Chemical Mechanical Polishing : Semiconductors
Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation
Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
The Stability of Nano Fwned Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics
Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
Spectral Analyses of the Impact of Nanotopography of Silicon Wafers on Oxide Chemical Mechanical Polishing : Semiconductors

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