Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-03-01

著者

• Kim Sung-jun

  Department Of Ceramic Engineering Hanyang University

• Kim S‐j

  Department Of Ceramic Engineering Hanyang University

• Kang H‐g

  Nano-soi Process Laboratory Hanyang University

• Paik U

  Department Of Ceramic Engineering Hanyang University

• Paik Ungyu

  Department Of Ceramic Engineering Hanyang University

• Kim S‐k

  Hanyang Univ. Seoul Kor

• Park J‐g

  Nano-soi Process Laboratory Hanyang University

• Kang Hyun‐goo

  Hanyang Univ. Seoul Kor

• Kim Sung-jun

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-SOI Process Laboratory, Hanyang University

• Park Hyung-soon

  Hynix Semiconductor Inc.

• KANG Hyun-Goo

  Nano-SOI Process Laboratory, Hanyang University

• KATOH Takeo

  Nano-SOI Process Laboratory, Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Advanced Semiconductor Material And Device Development Center Hanyang University

• Kang Hyun-goo

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

• Katoh Takeo

  Nano-soi Process Laboratory Hanyang University

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• The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
• Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
• A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
• Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
• Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
• Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
• Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

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