Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the nanotopography impact on the post-chemical mechanical polishing (post-CMP) oxide thickness deviation (OTD) and the non-Prestonian behavior of ceria slurry with a surfactant. Not only the surfactant but also the slurry abrasive size influenced the non-Prestonian behavior and the nanotopography impact. We created a one-dimensional numerical simulation of the nanotopography impact by taking account of the non-Prestonian behavior of the slurry, and good agreement with the experimental results was obtained. After examining the mechanism of oxide surface planarization during CMP, an index to relate the non-Prestonian behavior of the slurry to the nanotopography impact was developed.
- 2004-02-01
著者
-
Paik Ungyu
Department Of Ceramic Engineering Hanyang University
-
Park Jea-gun
Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University
-
Katoh Takeo
Nano-soi Process Laboratory Hanyang University
-
Kim Min-seok
Nano-soi Process Laboratory Hanyang University
-
Kim Min-Seok
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
関連論文
- Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
- Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
- Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
- Effects of Physical Characteristics of Cerium Oxide of Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
- The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
- Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- Spectral Analyses on Pad Dependency of Nanotopography Impact on Oxide Chemical Mechanical Polishing : Semiconductors
- Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- The Stability of Nano Fwned Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics
- Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
- Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
- Spectral Analyses of the Impact of Nanotopography of Silicon Wafers on Oxide Chemical Mechanical Polishing : Semiconductors
- Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
- Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
- Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
- Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation