Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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Paik U
Department Of Ceramic Engineering Hanyang University
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Paik Ungyu
Department Of Ceramic Engineering Hanyang University
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Park J‐g
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Nano-SOI Process Laboratory, Hanyang University
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KATOH Takeo
Nano-SOI Process Laboratory, Hanyang University
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KIM Min-Seok
Nano-SOI Process Laboratory, Hanyang University
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Park Jea-gun
Advanced Semiconductor Material And Device Development Center Hanyang University
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- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
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- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
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- Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
- Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
- Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
- Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
- Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
- The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
- Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
- Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
- A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
- Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
- Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
- Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
- Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
- Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
- Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
- Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation