Advanced Czochralski Single Silicon Crystal Growth (特集:21世紀を担うバルク単結晶) -- (シリコン)
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概要
- 論文の詳細を見る
Pure silicon wafers are free of COPs, oxidation induced stacking fault ring, and interstitial silicon dislocation loops. Pure silicon single crystal ingot can be grown with satisfying 0.213<V/G<0.219 mm^2 min^<-1>K^<-1> along radi-al and axial direction of crystal growth using CZ crystal growth method. Nitrogen doping during the crystal growth of pure silicon ingot changes vacancy-rich region to abnormal oxygen precipitate region via the reaction between interstitial nitrogen and vacancy. In addition, nitrogen doping does not change the pull rate margin of pure silicon ingot growth.
- 日本結晶成長学会の論文
- 2000-07-15
著者
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Park J‐g
Nano-soi Process Laboratory Hanyang University
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PARK Jea-Gun
Advanced Semiconductor Material and Device Development Center, Hanyang University
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Park Jea-gun
Advanced Semiconductor Material & Device Development Center Hanyang University
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