Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing

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概要

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• The effect of an organic additive on the surface roughness of a polycrystalline silicon (poly-Si) film was investigated by chemical mechanical polishing (CMP). The surface roughness of the polished poly-Si film was markedly reduced by adding 0.001 wt % hydroxyl ethyl cellulose (HEC) and then decreased slightly with further addition of HEC. We concluded that the reduction of surface roughness was attributed to the formation of a hydroplane layer on the poly-Si surface. Evidence of the hydroplane layer was verified by contact angle and X-ray photoelectron spectroscopy (XPS) measurements.

• 2010-01-25

著者

• PARK Jin-hyung

  Advanced Semiconductor Material and Device Development Center, Hanyang University

• Park Jea-gun

  Advanced Semiconductor Material & Device Development Center Hanyang University

• Paik Ungyu

  Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Korea

• Park Jea-Gun

  Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea

• Hwang Hee-Sub

  Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea

• Yi Sok-Ho

  Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea

• Park Jin-Hyung

  Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea

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