Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing

スポンサーリンク

概要

• 論文の詳細を見る

• Through chemical mechanical polishing (CMP) tests using polycrystalline silicon (polysilicon) and oxide blanket film wafers, the effects of alkaline agents added to colloidal silica slurries were investigated. With increasing concentration of the alkaline agent, a decreasing trend after an initial increase in the polysilicon removal rate was found, along with a low oxide removal rate, enabling high selectivity. The surface roughness similarly became worse and then better with increasing concentration of the alkaline agent. The results suggest a mechanism in which hydroxide bonds to the Si surface of the abrasives in the slurry and OH- attaches to the polysilicon surface. The silanol group induces high polarization and thus weakens the Si–Si back bonds. These results can be qualitatively explained in terms of the chemical reaction between the polysilicon surface and the alkaline agent in the slurry, according to the hydrophobicity and hydrophylicity as indicated by contact angle measurements.

• 2007-08-15

著者

• Kang Hyun-goo

  Nano-soi Process Laboratory Hanyang University

• Lee Myung-yoon

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

• Paik Ungyu

  Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Korea

• Kanemoto Manabu

  Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea

• Kanemoto Manabu

  Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea

• Lee Myung-Yoon

  Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea

関連論文

• Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
• Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
• Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
• Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
• Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
• Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
• Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
• Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
• Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• Fluidic Properties of Carbon Nanotube Inks and Field Emission Properties of Ink Jet-Printed Emitters
• Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing
• Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
• Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
• Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
• Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
• Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
• Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
• The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
• Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
• A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
• Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
• Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
• Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
• Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

もっと見る 閉じる

スポンサーリンク