Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

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概要

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• The interactions between buried defects and impurities formed by MeV-level nitrogen ion implantation in silicon have been investigated. The interactions between the oxygen atoms in a CZ Si wafer and the defects introduced during annealing after implantation are discussed in terms of the amount, nature, morphology, and depth distribution of the defects. Oxygen atoms are found to be gettered in two different regions in the implanted layers. A shallow oxygen peak appears in regions near the surface (between 0.5 and 1.5 μm). A deep oxygen peak is also observed at locations with secondary defects, which mainly consist of elongated dislocation loops and dislocation networks. In this case, the gettered oxygen content is not especially influenced by the amount or nature of the generated defects. Rather, there is a good correlation between the gettered oxygen amount and the mismatch stress induced by the atomic radius difference.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-10-15

著者

• Paik Ungyu

  Department Of Ceramic Engineering Hanyang University

• KIM Suk-Goo

  Nano-SOI Process Laboratory, Department of Electrical and Computer Engineering, Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

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