Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
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概要
- 論文の詳細を見る
We examined the effect of the molecular weight of surfactants in ceria slurry during chemical mechanical polishing (CMP) for shallow trench isolation (STI). We found that for a surfactant with a higher molecular weight, the oxide removal rate decreased drastically as the surfactant concentration increased, but in the case of a lower molecular weight, it only slightly decreased. In addition, slurries whose surfactants had lower molecular weights maintained a higher nitride removal rate with increasing surfactant concentration. The results showed that the molecular weight and surfactant concentration have complex effects on the oxide removal rate and the oxide-to-nitride removal selectivity.
- 2004-08-15
著者
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Paik Ungyu
Department Of Ceramic Engineering Hanyang University
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Park Hyung-soon
Hynix Semiconductor Inc.
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Kang Hyun-goo
Nano-soi Process Laboratory Hanyang University
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Lee Myung-yoon
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University
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Katoh Takeo
Nano-soi Process Laboratory Hanyang University
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Lee Myung-Yoon
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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