Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)

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概要

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• We fabricated non-volatile memories with α-NPD and Alq_3, which are conductive-low-molecular organic material. I_<on>/I_<off> ratio for both materials was 〜 10^2, however, the endurance cycles of non-volatile memories with α-NPD and Alq_3 were 10^5 and 10^2, respectively. Although the conductive characteristics of α-NPD and Alq_3 are different from each other, they showed similar I-V characteristics producing a bi-stable electrical characteristics and negative differential resistance.

• 社団法人電子情報通信学会の論文
• 2006-06-26

著者

• Lim Se-yun

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-SOI Process Laboratory, Hanyang University

• Kim Jae-seok

  Nano-SOI Process Laboratory, Hanyang University

• Nam Woo-sik

  Nano-SOI Process Laboratory, Hanyang University

• Shin Chang-hyup

  Nano-SOI Process Laboratory, Hanyang University

• Seo Sung-ho

  Nano-SOI Process Laboratory, Hanyang University

• Kim Yoon-joong

  Electron Microscopy Team, Korea Basic Science Institute

• Park Jea-gun

  National Program Center For Terabit-level Nonvolatile Memory Development Hanyang University

• Seo Sung-ho

  National Program Center For Terabit-level Nonvolatile Memory Development Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

• Shin Chang-hyup

  Nano-soi Process Laboratory Hanyang University

• Nam Woo-sik

  National Program Center For Terabit-level Nonvolatile Memory Development Hanyang University

• Kim Jae-seok

  Nano-soi Process Laboratory Hanyang University

• Kim Yoon-joong

  Electron Microscopy Team Korea Basic Science Institute

関連論文

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