Current Transport Characteristics for Organic Nonvolatile Memories(Session5A: Si Devices II)

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Recently, organic nonvolatile memory has attracted much interest as a candidate device for next generation nonvolatile memory because of its simple process, small device area, and high speed. So, next generation nonvolatile memory is studied actively in many industrial and academic labs. However, results of many research groups announce differed, and anyone did not reveal correct current transport mechanism. We confirmed following results through continuous research. An organic memory cell fabricated with embedded metal nanocrystals in a layer of small molecules or a polymer layer could only show nonvolatile memory behavior of the organic memory type with I-V characteristic of negative differential resistance and a current path of the high-resistance, low-resistance, high-resistance, and high-resistance states when the applied bias was swept from program and erase at a positive voltage followed by program and erase at a negative voltage. On the other hand, organic devices fabricated without embedded metal nanocrystals could show only resistance behavior or nonvolatile memory behavior based on resistive random-access-memory with a current path of the low-resistance, high-resistance, high-resistance, and low-resistance states when the applied bias was swept as above. Moreover, as analyzing I-V characteristics of organic memory cells in relation to current conduction mechanism and temperature dependency of current, we aimed to find out current transport mechanism that contribute to show actually nonvolatile memory characteristics of organic memory cells.
社団法人電子情報通信学会の論文
2008-07-02

Current Transport Characteristics for Organic Nonvolatile Memories(Session5A: Si Devices II)

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