Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1)

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概要

• 論文の詳細を見る

• We have investigated the effect of Ag Nano-crystals on nonvolatile memory-cell fabricated whit a conductive polymer such as PVK. The structure of polymer nonvolatile memory-cell was PVK / Ag nano-crystals / PVK between the Al electrodes which feature size is the 4F^2 embedded with Ag nano-crystals in PVK (poly(N-vinylcarbazole). The polymer nonvolatile memory-cell embedded with Ag nano-crystals formed by the basis of 5-nm Ag film showed the memory margin (ratio of I_<on> to I_<off>) is 〜5.0×10^1 and the retention time is more than 10^5 seconds. Therefore, it was confirmed that Ag nano-crystal's shape, size, isolation and distribution determine a nonvolatile memory characteristics.

• 社団法人電子情報通信学会の論文
• 2010-06-23

著者

• Lee Jong-Dae

  National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and C

• Seung Hyun-Min

  National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and C

• Kwon Kyoung-Cheol

  National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and C

• Park Jea-Gun

  National Program Center for Tera-bit-level Nonvolatile Memory Development, Dept. of Electrical and C

• Lee Jong-dae

  National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co

• Seung Hyun-min

  National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co

• Park Jea-gun

  National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co

• Kwon Kyoung-cheol

  National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co

• Park Jea-gun

  National Program Center For Tera-bit-level Nonvolatile Memory Development Department Of Electronics

関連論文

• Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1)
• Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1)
• Current Transport Characteristics for Organic Nonvolatile Memories(Session5A: Si Devices II)
• Current Transport Characteristics for Organic Nonvolatile Memories(Session5A: Si Devices II)
• Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
• Small-Molecule Nonvolatile Memory Cells Embedded with Ti Nanocrystals Surrounded by TiO_2 Tunneling Barrier
• Erratum: ``Small-Molecule Nonvolatile Memory Cells Embedded with Ti Nanocrystals Surrounded by TiO2 Tunneling Barrier''

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