Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory
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概要
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In summary, we successfully developed the polymer nonvolatile 4F2 memory-cell. It was based on nonvolatile memory characteristics such as memory margin and retention time, which was observed in memory-cell embedded with Ag nanocrystals in PVK layer. The nonvolatile memory characteristics depend on the shape, distribution and isolation of Ag nanocrystals. Accordingly, the thickness of Ag film has an important role in optimizing the Ag nanocrystals. Therefore, the polymer nonvolatile memory-cell is fabricated by appropriate thickness of film and need an improvement of interface between Ag nanocrystals and PVK for sufficient nonvolatile memory characteristics.
- （社）電子情報通信学会の論文
- 2011-05-01
著者
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Lee Jong-dae
National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co
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Seung Hyun-min
National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co
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Park Jea-gun
National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co
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Kwon Kyoung-cheol
National Program Center For Tera-bit-level Nonvolatile Memory Development Dept. Of Electrical And Co
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Park Jea-gun
National Program Center For Tera-bit-level Nonvolatile Memory Development Department Of Electronics
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