Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-02-10

著者

• Kang H‐g

  Nano-soi Process Laboratory Hanyang University

• Paik U

  Department Of Ceramic Engineering Hanyang University

• Paik Ungyu

  Department Of Ceramic Engineering Hanyang University

• Park J‐g

  Nano-soi Process Laboratory Hanyang University

• Kang Hyun‐goo

  Hanyang Univ. Seoul Kor

• Park Jea-gun

  Nano-SOI Process Laboratory, Hanyang University

• Park Hyung-soon

  Hynix Semiconductor Inc.

• KANG Hyun-Goo

  Nano-SOI Process Laboratory, Hanyang University

• KATOH Takeo

  Nano-SOI Process Laboratory, Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Advanced Semiconductor Material And Device Development Center Hanyang University

• Kang Hyun-goo

  Nano-soi Process Laboratory Hanyang University

• Park Jea-gun

  Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University

• Katoh Takeo

  Nano-soi Process Laboratory Hanyang University

関連論文

• Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
• Non-volatile Memory Fabricated with Al Nanocrystals Embedded in Conductive-Low-Molecular-Organic Layers(Session 3 Emerging Devices and Technologies I,AWAD2006)
• Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
• Effects of Abrasive Size and Surfactant Concentration on the Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing
• Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
• Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
• Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
• Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
• Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
• The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
• Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
• A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
• Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
• Effect of Slurry Surfactant on Nanotopography Impact in Chemical Mechanical Polishing
• Effects of Physical Characteristics of Cerium Oxide of Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
• Surfactant Effect on Oxide-to-Nitride Removal Selectivity of Nano-abrasive Ceria Slurry for Chemical Mechanical Polishing
• The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
• Effect of Dispersant Addition during Ceria Abrasive Milling Process on Light Point Defect (LPD) Formation after Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• Spectral Analyses on Pad Dependency of Nanotopography Impact on Oxide Chemical Mechanical Polishing : Semiconductors
• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation
• Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• 14-O-26 Influence of Passivating Agents on the Dissolution Behavior of Barium Titanates in an Aqueous Medium
• The Stability of Nano Fwned Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics
• Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
• Effect of Nanotopography on Chemical Mechanical Polishing : Polishing Depth, Pad, Slurry and Interlayer Film Dependencies
• Dependency of Precipitation of Interstitial Oxygen on Its Crystal Nature in Czochralski Silicon Wafer
• Spectral Analyses of the Impact of Nanotopography of Silicon Wafers on Oxide Chemical Mechanical Polishing : Semiconductors
• Effect of Chemicals and Slurry Particles on Chemical Mechamical Polishing of Polyimide
• Crystal Originated Particle Induced Isolation Failure in Czochralski Silicon Wafers
• Advanced Czochralski Single Silicon Crystal Growth (特集:21世紀を担うバルク単結晶) -- (シリコン)
• Effect of Alkaline Agent in Colloidal Silica Slurry for Polycrystalline Silicon Chemical Mechanical Polishing
• Effects of Calcination and Milling Process Conditions for Ceria Slurry on Shallow-Trench-Isolation Chemical–Mechanical Polishing Performance
• Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Remaining Oxide Thickness Variation after Shallow Trench Isolation Chemical Mechanical Polishing
• Reduction of Large Particles in Ceria Slurry by Aging and Selective Sedimentation and its Effect on Shallow Trench Isolation Chemical Mechanical Planarization
• Effect of Calcination Process on Synthesis of Ceria Particles, and Its Influence on Shallow Trench Isolation Chemical Mechanical Planarization Performance
• Effects of the Physical Characteristics of Cerium Oxide on Plasma-Enhanced Tetraethylorthosiliate Removal Rate of Chemical Mechanical Polishing for Shallow Trench Isolation
• The Effect of Cerium Precursor Agglomeration on the Synthesis of Ceria Particles and Its Influence on Shallow Trench Isolation Chemical Mechanical Polishing Performance
• Agglomerated Large Particles under Various Slurry Preparation Conditions and Their Influence on Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of pH, Molecular Weight, and Concentration of Surfactant in Ceria Slurry on Saturated Nitride Removal Rate in Shallow Trench Isolation Chemical Mechanical Polishing
• Dependence of Non-Prestonian Behavior of Ceria Slurry with Anionic Surfactant on Abrasive Concentration and Size in Shallow Trench Isolation Chemical Mechanical Polishing
• A Reverse Selectivity Ceria Slurry for the Damascene Gate Chemical Mechanical Planarization Process
• Influence of Physical Characteristics of Ceria Particles on Polishing Rate of Chemical Mechanical Planarization for Shallow Trench Isolation
• Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
• Effects of Grain Size and Abrasive Size of Polycrystalline Nano-particle Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing
• Nanotopography Impact and Non-Prestonian Behavior of Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP)
• Dependence of Nanotopography Impact on Abrasive Size and Surfactant Concentration in Ceria Slurry for Shallow Trench Isolation Chemical Mechanical Polishing
• Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
• Extended Defects and Pile-Up of Interstitial Oxygen in Silicon Wafer Due to MeV-Level Nitrogen Ion Implantation

もっと見る 閉じる

スポンサーリンク