Effects of Abrasive Morphology and Surfactant Concentration on Polishing Rate of Ceria Slurry
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概要
- 論文の詳細を見る
To reveal the mechanism behind the high oxide-to-nitride removal selectivity of ceria slurry in shallow trench isolation (STI) chemical mechanical polishing (CMP), we examined the effects of the abrasive morphology and the concentration of surfactant added to control the selectivity. A slurry with small abrasives showed a more drastic drop in the oxide removal rate as the surfactant concentration increased, compared to a slurry with large abrasives. For the nitride removal rate, however, both slurries showed the same trend. These results can be qualitatively explained from the movement of abrasives though the layer of surfactant adsorbed on the film surface.
- 2003-03-15
著者
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Paik Ungyu
Department Of Ceramic Engineering Hanyang University
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Kang Hyun-goo
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University
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Katoh Takeo
Nano-soi Process Laboratory Hanyang University
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Kang Hyun-Goo
Nano-SOI Process Laboratory, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea
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