Nature of Surface and Bulk Defect Induced by Low Dose Oxygen Implantation in Separation by Implanted Oxygen Wafers

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概要

• 論文の詳細を見る

• Two new metrologies have been proposed to characterize unknown surface and bulk defects in separation by implanted oxygen (SIMOX) wafers. They included the following: i) laser scattering particle counter plus coordinated atomic force microscope (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. Three types of surface defects were found and described as follows: i) a hole with a locally thinned top silicon layer (Park Defect A), ii) a hole formed locally without either a silicon or a buried oxide layer (Park Defect B), and iii) a hole formed with both a locally thinned top silicon and a buried oxide layer (Park Defect C). In addition, a bulk defect was found to occur as locally distributed square-shaped pits accompanied by the disappearance of the buried oxide layer (isolation defect). All surface and bulk defects in SIMOX wafers originate from oxide particle generation by electrostatic discharge and mechanical abrasion between the wafer and the pin of the wafer holder during oxygen ion implantation.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-15

著者

• Park Jea-gun

  Advanced Semiconductor Material & Device Development Center Hanyang University

• Shim Tae-hun

  Samsung Electronics Co.

• Lee Gon-sub

  Advanced Semiconductor Material & Devices Development Center Hanyang University

• Shim Tae-Hun

  Samsung Electronics Co., San #24 Nongseo-Ri, Kiheung-Eup, Youngin City, Kyungi-Do, 449-900 Korea

• Kim Suk-Goo

  Advanced Semiconductor Material and Devices Development Center, Hanyang University, Seoul, 133-791 Korea

• Lee Gon-Sub

  Advanced Semiconductor Material and Devices Development Center, Hanyang University, Seoul, 133-791 Korea

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