Park Jea-gun | 論文著者

Advanced Semiconductor Material & Device Development Center Hanyang University

Advanced Semiconductor Material & Device Development Center, Hanyang University

Advanced Semiconductor Material & Devices Development Center Hanyang University

Advanced Semiconductor material & Devices Development Center, Hanyang University

Advanced Semiconductor Material & Devices Development Center, Hanyang University, Seoul, 133-791, Korea <BR> <FONT SIZE="-1"><SUP>1</SUP></FONT>Samsung Electronics Co., San #24 Nongseo-Ri, Kiheung-Eup, Youngin C

Advanced Semiconductor Material And Device Development Center Hanyang University

Advanced Semiconductor Material and Device Development Center, Hanyang University

Advanced Semiconductor Material and Device Development Center, Hanyang University, 17 Haengdang-Dong, Seoungdong-Gu, Seoul 133-791, Korea

Advanced Semiconductor Material And Devices Development Center Hanyang University

Advanced Semiconductor Material and Devices Development Center, Hanyang University, Seoul, 133-791 Korea

Advanced Semiconductor Material Devices and Development Center, Hanyang University, Seoul 133-791, Korea

Advanced Semiconductor Materials and Device Development Center, Hanyang University, Seoul 133-791, Korea

Advanced Semiconductor Materials and Devices Development Center, Hanyang University

Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea

Advanced Semivonductor Materials and Devices Devices Development Center, Hanyang University

Department of Nano Scale Semiconductor Engineering and Electronic Engineering, Hanyang University, Seoul 133-791, Republic of Korea

Nano Soi Process Laboratory Hanyang University

Nano SOI Process Laboratory, Hanyang University

Nano SOI Process Laboratory, Hanyang University, 17 Heangdang-Dong, Seongdong-Gu, Seoul 133-791, Korea

Nano-soi Process Laboratory Department Of Electrical And Computer Engineering Hanyang University