SUGA Hisaaki | Mitsubishi Materials Silicon Corporation
スポンサーリンク
概要
関連著者
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SUGA Hisaaki
Mitsubishi Materials Silicon Corporation
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Lee Won-mo
Nano-soi Process Laboratory Hanyang University
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Paik U
Department Of Ceramic Engineering Hanyang University
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Park J‐g
Nano-soi Process Laboratory Hanyang University
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Park Jea-gun
Nano-SOI Process Laboratory, Hanyang University
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KATOH Takeo
Nano-SOI Process Laboratory, Hanyang University
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Jeon H
Hanyang Univ. Seoul Kor
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Morita Etsuro
Mitsubishi Materials Silicon Co. Ltd.
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Morita Etsuro
Mitsubishi Materials Silicon Corporation
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Park Jea-gun
Nano-soi Process Laboratory Hanyang University
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JEON Hyeongtag
Department of Materials Science and Engineering, Hanyang University
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KATOH Takeo
Advanced Semiconductor Material and Device Development Center, Hanyang University
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PARKf Jea-Gun
Advanced Semiconductor Material and Device Development Center, Hanyang University
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LEE Won-Mo
Department of Materials Science and Engineering, Hanyang University
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PAIK Un-Gyu
Department of Ceramic Engineering. Hanyang University
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SASSA Kouichi
Central Research Institute
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Park Jea-gun
Advanced Semiconductor Material And Device Development Center Hanyang University
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Park Jea-gun
Advanced Semiconductor Material & Device Development Center Hanyang University
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Katoh Takeo
Nano-soi Process Laboratory Hanyang University
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Sassa Kouichi
Central Research Institute Mitsubishi Materials Corporation
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Akiyama Kazuhiro
Central Research Institute Mitsubishi Materials Corporation
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NAITO Nobumasa
Central Research Institute, Mitsubishi Materials Corporation
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NAGAMORI Motoaki
Central Research Institute, Mitsubishi Materials Corporation
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KOYA Hiroshi
Mitsubishi Materials Silicon Corporation
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Naito Nobumasa
Central Research Institute Mitsubishi Materials Corporation:mitsubishi Materials Silicon Corporation
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Nagamori Motoaki
Central Research Institute Mitsubishi Materials Corporation:mitsubishi Materials Silicon Corporation
著作論文
- The Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide Chemical Mechanical Polishing : Semiconductors
- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics