Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics
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概要
- 論文の詳細を見る
- 1995-02-01
著者
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Morita Etsuro
Mitsubishi Materials Silicon Co. Ltd.
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Morita Etsuro
Mitsubishi Materials Silicon Corporation
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SUGA Hisaaki
Mitsubishi Materials Silicon Corporation
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SASSA Kouichi
Central Research Institute
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Sassa Kouichi
Central Research Institute Mitsubishi Materials Corporation
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Akiyama Kazuhiro
Central Research Institute Mitsubishi Materials Corporation
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NAITO Nobumasa
Central Research Institute, Mitsubishi Materials Corporation
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NAGAMORI Motoaki
Central Research Institute, Mitsubishi Materials Corporation
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KOYA Hiroshi
Mitsubishi Materials Silicon Corporation
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Naito Nobumasa
Central Research Institute Mitsubishi Materials Corporation:mitsubishi Materials Silicon Corporation
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Nagamori Motoaki
Central Research Institute Mitsubishi Materials Corporation:mitsubishi Materials Silicon Corporation
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- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown Characteristics
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- Contactless Estimation of the Surface Recombination Velocity at High-Low Junction Surfaces Fabricated by the Ion-Implantation Technique