Laser-Induced-Fluorescence Study of the SiH_2 Density in RF SiH_4 Plasmas with Xe, Ar, He, and H_2 Dilution Gases
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概要
- 論文の詳細を見る
The silylene (SiH_2) density in a parallel-plate RF (13.56 MHz) discharge using monosilane (SiH_4) gas has been measured by using laser-induced fluorescence spectroscopy. The effect of Xe, Ar, He and H_2 dilution gases on the SiH_2 density was investigated at a total gas pressure of 40 mTorr. In all dilution cases, the SiH_2 density was relatively insensitive to the SiH_4 fraction (x) in the mixtures for x〓0.5; however, except in the case of H_2 dilution, marked increase of the SiH_2 density was observed with decreasing x for x〓0.5. The production and loss mechanisms for SiH_2 are discussed on the basis of the observed SiH_2 density and supplementary optical emission measurements. The results indicate that, in highly diluted (x〓0.1)SiH_4/Xe and SiH_4/Ar mixtures, the production of SiH_2 via energy transfer from excited Xe and Ar atoms to SiH_4 is dominant over direct electron impact dissociation of SiH_4.
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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Nomura H
Toshiba Corp. Yokohama Jpn
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Koike N
Nagoya Univ. Nagoya Jpn
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Kono Akihiro
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
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Kono A
Nagoya Univ. Nagoya Jpn
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Kono Akihiro
Department Of Electrical Engineering And Computer Science Nagoya University
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Nomura H
Laboratory Of Chemistry Department Of Natural Science School Of Science And Technology Tokyo Denki U
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Goto Toshio
Department Of Electronics Faculty Of Engineering Nagoya University
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NOMURA Hideshi
Department of Information Electronics, School of Engineering, Nagoya University
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KOIKE Naoki
Department of Information Electronics, School of Engineering, Nagoya University
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Goto Toshio
Department Of Electronic Mechanical Engineering Nagoya University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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