Effect of Dilution Gases on the SiH_3 Radical Density in an RF SiH_4 Plasma (<Special Issue> Plasma Processing)
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概要
- 論文の詳細を見る
Infrared diode laser absorption spectroscopy was used to measure the density of silyl (SiH_3) radicals in lowpressure (4.0 Pa) 13.56-MHz rf plasmas utilizing H_2/, He/, Ar/, and Xe/SiH_4 gas mixtures. The SiH_3 production frequency per SiH_4 molecule was also derived from the SiH_3 density and its decay rate in the afterglow. The observed SiH_3 density decreased with increasing dilution ratio in all the gas mixtures, but the SiH_3 production frequency per SiH_4 molecule increased significantly for Xe dilution and remained nearly constant for H_2, He, and Ar dilution. Based on these results, the relative importance of different SiH_3 production channels is discussed.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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Nomura H
Toshiba Corp. Yokohama Jpn
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Kono Akihiro
Center for Cooperative Research in Advanced Science and Technology, Nagoya University
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Kono A
Nagoya Univ. Nagoya Jpn
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Kono Akihiro
Department Of Electrical Engineering And Computer Science Nagoya University
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Nomura H
Laboratory Of Chemistry Department Of Natural Science School Of Science And Technology Tokyo Denki U
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Goto Toshio
Department Of Electronics Faculty Of Engineering Nagoya University
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NOMURA Hideshi
Department of Information Electronics, School of Engineering, Nagoya University
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Goto Toshio
Department Of Electronic Mechanical Engineering Nagoya University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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