六方晶バリウムフェライト薄膜用ZnO下地膜の構造制御

概要

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We attempted to reduce the crystallite size of a ZnO underlayer to make it possible to deposit hexagonal barium ferrite (BaM) thin film magnetic recording media with a crystallite size of less than 30 nm by using a facing targets sputtering system. The ZnO undrlayer was deposited at a substrate temperature of 250℃, since the crystallite size of ZnO films deposited at this temperature are changed little by annealing at temperatures as high as 600℃. The crystallite size of the ZnO underlayer decreased monotonically as the film thickness decreased, and was less than 20 nm in the film that was less than 20 nm thick. A 30 nm thick BaM film deposited on a 20 nm thick ZnO underlayer had a crystallite size of about 30 nm. The ZnO underlayer not only limits the crystallite size of the BaM film deposited on it,but also promotes crystallization in the film. Our findings indicate that by depositing a BaM film on a ZnO underlayer that is less than 20 nm thick, we can obtain a BaM thin film with a small crystallite size.
東京工芸大学の論文
1996-01-31