原子層積層法によるBaフェライト薄膜の作製 : 下地層による結晶性の制御

概要

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In order to obtain a hexagonal barium ferrite (BaM) film with large saturation magnetization, we attempted to redece the thickness of a ZnO underlayer and to deposit BaM film on underlayers of various materials such as α-Fe_2O_3, amorphous barium ferrite (a-BaM), amorphous BaFe_6O_<10> (a-BaFe_6O_<10>), and ZnFe_2O_4. The following results were obtained:(1) A ZnO underlayer less than 10 nm thick signficantly degraded the c-axis orientation of the BaM films. (2) A BaM film with c-axis orientation was obtained only on ZnO, a-BaM/ZnO, and ZnFe_2O_4 underlayers.In particular, a film deposited on a(111)-oriented ZnFe_2O_4 underlayer had excellent c-axis orientation and magnetic properties. (3) The saturation magnetizations of films deposited on the various underlayers had low values below 260 emu/cc, and could not be increased by reducing the thickness of the ZnO underlayer or by depositing the film on an underlayer that did not contain ZnO.
社団法人日本磁気学会の論文
1998-04-15