18aA07 AlGaN/GaN超格子挿入によるMOVPE成長立方晶GaN中の欠陥密度低減(立方晶GaN結晶成長を考える,ナノ・エピシンポジウム,第35回結晶成長国内会議)

概要

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Al_xGaN_<1-x>/GaN superlattice (SL) insertion was shown to improve the structural homogeneity and photoluminescence (PL) lifetime of cubic (c-) GaN epilayers on (001) GaAs substrates due to the reduction in structural and nonradiative defects during low-pressure metalorganic vapor phase epitaxy (MOVPE). The density or size of Ga-vacancy (V_<Ga>)-related defects was also significantly reduced by the SL insertion. Correlation between the lifetime and point defect species was made using time-resolved PL and monoenergetic positron annihilation measurements.
日本結晶成長学会の論文
2005-08-17