ECR-MBE法による石英ガラス基板上多結晶GaNの結晶成長と特性評価(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)

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Growth and properties of polycrystalline GaN are reviewed. GaN has been grown on an amorphous silica glass substrate by electron-cyclotron-resonance plasma-excited molecular beam epitaxy. GaN grown on silica glass is c-oriented polycrystalline consisting of columnar domains. Strong photoluminescence at near band edge of hexagonal GaN is observed from the polycrystalline GaN. Using nitridation of the substrate surface, polycrystalline GaN with improved c-axis orientation has been successfully grown on silica glass. This substrate nitridation gives rise to the formation of a silicon nitride layer, and results in a marked improvement in the uniformity of c-axis orientation and the surface morphology of subsequently grown polycrystalline GaN. These results demonstrate the potential of polycrystalline GaN grown on silica glass in the fabrication of low-cost, Iarge-size GaN-based devices.
2003-06-25