GaAsエピタキシャル成長における吸着-脱離現象への理論的アプローチ(<小特集>結晶成長理論の最近の動向)

概要

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A newly developed ab initio-based approach was applied for understanding adsorption-desorption behavior during molecular beam epitaxial growth of GaAs. The ab initiobased approach incorporates free energy of vapor phase; therefore we can calculate how adsorption and desorption depend on growth temperature and beam equivalent pressure (BEP). Versatility of the theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on Ga-rich GaAs (001)-(4×2)β2 surface. Furthermore, in order to check the feasibility of the theoretical approach for prediction of adsorption-desorption behavior of As_2 molecules, the conditions where GaAs(001)-c (4×4) reconstructed structure is stable were investigated by the calculations of stability of As-dimers on the top surface under the various temperatures and BEPs. We also applied the theoretical approach to Ga diffusion length while staying on the GaAs (001)- (2×4)β2 and - (2×4)β1 surfaces and As pressure dependence of GaAs growth rate.
日本結晶成長学会の論文
2002-04-10