成長条件で決まるミクロな構造とマクロな物性 : 半導体中Er発光の成長条件依存性とその局所構造

概要

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We demonstrate that fluorescence EXAFS (Extended X-ray Absorption Fine Structure) using synchrotron radiation is now a powerful technique to analyze local structures around impurity atoms of the order of 10^<18> cm^<-3> which is a typical concentration used in semiconductors. Taking the Er atoms in InP as an example, growth condition dependences of light emission from Er and of local structures are investigated. A drastic change of PL intensity at 1.54 pm from the Er intra-4f transition by the growth temperature is successfully elucidated by the analysis of the Er local structures with the fluorescence EXAFS. At the growth temperatures lower than 550℃, the Er atoms form the zincblende structure with the nearest neighbor atoms (P) and at the higher temperatures they form the rocksalt structure. The relationship between the local structure and the PL intensity is discussed. The local structure in the Er and O co-doped GaAs is also investigated and a clear relationship between the local structure and the PL characteristics is obtained.
日本結晶成長学会の論文
1998-03-30