Cat-CVD法により形成したSiNx膜の応力制御(S05-3 薄膜の強度物性,S05 薄膜の強度物性と信頼性)

概要

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Silicon nitride (SiN_x) films were deposited on Si substrates at 80℃ by using a catalytic chemical vapor deposition (Cat-CVD) technique to investigate the optimal deposition condition. SiH_4 flow rate was varied from 6 to 18 sccm. It is shown that the stress, Young's modulus, fracture toughness and film composition strongly depend on SiH_4 flow rate. These changes of film properties are related to the gases desorption from growing surface. The amount of the gases desorption reaction depends on deposition rate, that is, the rate of the Si-H insertion reaction. The desorption of hydrogen and ammonia gases from growing surface causes the shrinkage of the film surface, which generates tensile stress. Also, SiN_x films with high hydrogen contents show low stress, low Young's modulus and high fracture toughness.
社団法人日本機械学会の論文
2004-09-04