Cat-CVD法による窒化シリコン薄膜の低温堆積 : 気相診断と膜質評価(<特集>半導体エレクトロニクス)

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It is possible to prepare high-density, moisture-resistive and optically transparent SiN_x films by a catalytic chemical vapor deposition (Cat-CVD, often called Hot-Wire CVD) technique at low substrate temperatures such as 353K. The key point is the addition of a large amount of H_2 to the SiH_4/NH_3 system. Gas-phase diagnoses show that, in Cat-CVD processes, the H-atom density in the gas phase is typically more than one order of magnitude higher than that in plasma processes; these H atoms abstract atomic hydrogen on the growing surface and also contribute to the local heating of the substrate surface due to their recombination reactions. In addition, H atoms re-activate the catalyzer surfaces poisoned by SiH_4 to increase the decomposition efficiency of NH_3. Pressure cooker tests combined with FTIR measurements show that SiN_x films thus prepared are highly moisture-resistive even when the substrate temperature is as low as 293K. The water vapor transmission rate of plastic substrates covered with thin SiN_x films is less than the detection limits of a MOCON or a cup method. The transmission rate was decreased by more than two orders of magnitude by the SiN_x coating. The stress of the SiN_x films was typically less than 100MPa and can be controlled from compressive to tensile by choosing the appropriate deposition conditions. It is concluded that SiN_x films prepared by Cat-CVD from SiH_4, NH_3 and an excess amount of H_2 can be used as passivation films for organic materials, including organic light-emitting diodes.
社団法人日本材料学会の論文
2006-02-15

Cat-CVD法による窒化シリコン薄膜の低温堆積 : 気相診断と膜質評価(<特集>半導体エレクトロニクス)

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