Effects of the Reaction Pressure on the Growth of PbTiO_3 Thin Films by the Photo-Chemical Vapor Deposition Method
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概要
- 論文の詳細を見る
Growth of PbTiO_3 thin films was carried out by the photo-chemical vapor deposition (photo-CVD) method and by varying the growth parameters of substrate temperature, reaction pressure and UV light irradiation. In order to clarify the effects of these parameters on the thin film growth, a three-way-lay-out factorial experiment was done. In the higher temperature and pressure region the vapor phase reaction is dominant. At lower temperatures and pressures, the reaction on the substrate becomes significant. These tendencies were observed under conditions with and without UV light irradiation. The synthesis of PbTiO_3 on Pt/sapphire was assisted by UV light irradiation.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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ANDO AKIRA
Department of Orthopaedic Surgery, Tohoku University Graduate School of Medicine
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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Ando Akira
Department Of Molecular Engineering Graduate School Of Engineering Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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Ando Akira
Department Of Ceramic R&d Murata Manufacturing Co. Ltd.
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Ando Akira
Department Of Anatomy Tohoku University School Of Medicine
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