Growth of BaTiO_3:Ce Single Crystals and Their Properties

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BaTiO_3 and BaTiO_3:Ce single crystals were grown by the top-seeded solution growth (TSSG) technique. Instead of mechanical poling, a thermal treatment was developed to reduce the 90° domains in this work. After the thermal treatment, the single crystals could be poled to the single-domain state under an electrical field of 1 kV/cm near its Curie temperature for 3 h. Lightly doped BaTiO_3:Ce is light brown and its optical absorption increased with increasing Ce content. Electrooptic coefficients r^T_<13> and r^T_<42> were measured. A heavily doped BaTiO_3:Ce appeared dark and opaque in visible light. Specific resistance ρ of the heavily doped crystal in the <100> direction at room temperature was about 80 Ω・m, and a resonance change was observed at 120℃, which corresponds to the Curie temperature. This crystal showed both ferroelectric and semiconductive properties. The concentration of Ce in the crystal was found to be 2.6 times that in the melt.
社団法人応用物理学会の論文
1997-09-30