Switching Kinetics of Pb(Zr,Ti)O_3 Thin Films Grown by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The pulse switching kinetics of ferroelectric Pb(Zr,Ti)O_3 thin films grown by chemical vapor deposition (CVD) has been investigated. The switching time was proven to be proportional to the electrode area of the thin-film capacitor under our measurement conditions. Polarization switching was also characterized by the exponential functions of reciprocal voltage. On the basis of the experimental results, the relationships among the apparent switching phenomena, the nucleation process of reversed domains and the time constant of the measurement system are discussed. Moreover, the switching time determined by the low nucleation rate is formulated.
- 社団法人応用物理学会の論文
- 1993-09-15
著者
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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