Preparation of C-Axis-Oriented Bi_4Ti_3O_<12> Thin Films by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Bi_4Ti_3O_<12> thin films were prepared on Pt/SiO_2/Si(100), Pt/Ti/SiO_2/Si(100) and sapphire (R-cut) by metalorganic chemical vapor deposition (MOCVD). Bi(C_6H_5)_3 and Ti(i-OC_3H_7)_4 were chosen as the metalorganic precursors. C-axis-oriented Bi_4Ti_3O_<12> thin films were grown on Pt/SiO_2/Si (100) at 550℃. These films deposited directly on the substrates exhibit high loss and exhibit very rough surface morphology. However, a Bi_4Ti_3O_<12> film with a Bi_2Ti_2O_<7> buffer layer on Pt/SiO_2/Si(100) exhibits very smooth morphology and are highly c-axis-oriented. This film shows remanent polarization of 0.6 μC/cm^2, coercive field of 13 kV/cm and dielectric constant of 180.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Nakamura Takashi
Rohm Co. Ltd.
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Nakamura T
Hokkaido Univ. Sapporo Jpn
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Nakamura Tetsuro
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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Muhammet R
Department Of Electrical Engineering Nagaoka University Of Technology
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Muhammet Rusul
Department Of Industrial Chemistry Faculty Of Engineering Chubu University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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MUHAMMET Rusul
Department of Electrical Engineering, Nagaoka University of Technology
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