Current Saturation Related to Internal Potential Barrier in Se Crystal
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概要
- 論文の詳細を見る
Current saturation is observed at electric fields higher than 10 kV/cm in Se crystal under illumination at 77-290 K. The transient time from the initial current value to the final current value is 1-10 ms for a single pulse measurement, and 25 μs for repeated pulses at 1 kHz for example. The saturation is not caused by the acoustoelectric effect but by the field quenching effect of photoconductivity explained by the barrier model and the dislocation recombination model. It is concluded that the potential barrier height increases by the application of a high electric field large enough so as to overcome the decrease by illumination, and the final value of the current saturates at high electric fields. The relation between the applied high electric field and the rate of photoconductivity decay is also measured, and the results are explained in terms of the equations developed from the models.
- 社団法人応用物理学会の論文
- 1973-02-05
著者
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Fukuda Susumu
Department Of Agricultural And Resource Economics Faculty Of Agriculture Kyushu University
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Fukuda Susumu
Department Of Electronics Faculty Of Engineering Kyoto University
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Shiosaki Tadashi
Department of Electronic, Faculty of Engineering, Kyoto University
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Kawabata Akira
Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University
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Kawabata Akira
Department Of Electronics Faculty Of Engineering Kyoto University
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Kawabata Akira
Department Of Chemistry Faculty Of Science Fukuoka University
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