Preparation and Switching Kinetics of Pb(Zr, Ti)O_3 Thin Films Deposited by Reactive Sputtering : Thin Films
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概要
- 論文の詳細を見る
Ferroelectric Pb(Zr, Ti)O_3 [PZT] thin films have been prepared on Pt/Ti/SiO_2/Si and Pt/SiO_2/Si substrates using the reactive sputtering method with a metal composite target. The (111)-oriented PZT(80/20) thin films with a perovskite structure have been obtained at a substrate temperature of 595℃ on highly (111)-oriented Pt films formed on SiO_2/Si substrates. When an 8V pulse sequence was applied to a 265 nm-thick film with an electrode area of 50×50μm^2, the switching time and the switched charge density measured were 20 ns and 10 μC/cm^2, respectively. The switching time was strongly dependent on the electrode area.
- 社団法人応用物理学会の論文
- 1991-09-30
著者
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Hase Takashi
Department Of Electronics Faculty Of Engineering Kyoto University
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