Single Crystal Growth of Se-Te Alloys onto Tellurium from the Melts
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概要
- 論文の詳細を見る
The method to obtain single crystals of Se-Te alloys is developed. In this method, it is possible to grow a single crystal of an alloy from the melt, using a single crystal of tellurium as a seed for a Bridgmanlike method. The crystal is grown epitaxially onto tellurium. The obtained crystals is homogeneous except the layer of a few mm thick on the substrate. Single crystal growth at reasonable rates is limited to the alloys containing less than about 30% tellurium because of constitutional supercooling problem. The cross area of an ingot obtained by this method is the same as that of a tellurium substrate, whose large crystal is prepared comparatively easily, and 30 mm long alloy crystals of 12×15 mm^2 cross area are obtained easily.
- 社団法人応用物理学会の論文
- 1971-10-05
著者
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Kawabata Akira
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Kawabata Akira
Department Of Chemistry Faculty Of Science Fukuoka University
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KAWABATA Akira
Department of Electrical Engineering II, Faculty of Engineering, Kyoto University
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