Preparation of Oxide Thin Films by Laser Ablation
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概要
- 論文の詳細を見る
ZnO and PbZr_<0.9>Ti_<0.1>O_3 (PZT) thin films were prepared by laser ablation using a KrF excimer laser. The c-axis-oriented ZnO thin films were successfully grown at substrate temperatures of 180-400℃ in Ar and Ar+O_2. The deposition rates of the films obtained ranged from 150 to 700 Å/min, and these values were larger than those of films grown by conventional magnetron sputtering. Perovskite-type PZT thin films with a rhombohedral structure were also successfully grown at 680℃. The deposition rates of the films obtained ranged from 40 to 240 Å/min, and these values were also larger than those of films grown by magnetron sputtering.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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SHIMIZU Masaru
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Universi
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OGASAWARA Masaru
Department of Chemical Pharmacology, Faculty of Pharmaceutical Sciences, Toyama Medical and Pharmace
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Shiosaki Tadashi
Department of Electronic, Faculty of Engineering, Kyoto University
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Ogasawara Masaru
Department Of Chemical Pharmacology Faculty Of Pharmaceutical Sciences Toyama Medical And Pharmaceut
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Ogasawara Masaru
Department Of Electronic Equipment Hokkai Can Co. Lid.
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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