Acoustoelectric Phenomena by the Two Carriers in Se-Te Alloy Crystals
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概要
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The band gap width was increased by adding selenium into tellurium. Therefore the acoustoelectric phenomena, i.e. current oscillation and saturation appeared even at room temperatures and above in Se_5Te_<95>, Se_<10>Te_<90>, Se_<15>Te_<85> and Se_<20>Te_<80> alloy crystals. The measured temperature dependence of these phenomena is explained by a theory of the acoustoelectric current in the extrinsic material influenced by the minority carriers [M. Fink and G. Quentin: Phys. Status solidi (a)4 (1971) 397]. The acoustoelectric effect by electrons appeared at about 20 V/cm at room temperatures. The electron mobility obtained from the threshold electric field for the effect was 10-20 times larger than that of holes. The alloy crystals may be the first crystals which effected, at room temperatures, the ultrasonic amplification by minority carriers proposed theoretically by C.A.A.J. Greebe and P.A. van Dalen [Phi1ips Res. Rep. 24(1969) 168; Phys. Letters 28A (1968) 455].
- 1972-10-05
著者
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Kawabata Akira
Department Of Chemistry Faculty Of Science Fukuoka University
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Matsumoto Heihachi
Department Of Electronics Faculty Of Engineering Kyoto University:(present Address) Kitaitami Works
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KAWABATA Akira
Department of Electronics, Faculty of Engineering, Kyoto University
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