Preparation and Characterization of Pb(Zr_xTi_<1-x>)O_3 Thin Films by Reactive Sputtering Using an Alloy Target
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概要
- 論文の詳細を見る
Pb(Zr_x, Ti_<1-x>)O_3(PZT) thin films were deposited on Pt/SiO_2/Si substrates by rf-magnetron sputtering using analloy target consisting of Zr-Ti alloy and a Pb metal. When an alloy target was used in reactive sputtering, no change was observed in the Zr/Ti ratio of the films for up to 300 h for target uses. The (111)-oriented PZT films were successfully grown at substrate temperatures of 605-620℃. The coercive fields (E_c) and remanent polarizations (P_r) of the films with only the perovskite phase were in the range of 70-72 kV/cm and 20-22 μC/cm^2, respectively. In fatigue behavior, switched charge density started to drop at 10^8 cycles.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Shimizu Masaru
Department Of Electronics Faculty Of Engineering Kyoto University
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HAYASHI Koji
Inorganic Materials Research Laboratory, Ube Industries, Ltd.
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Hayashi Koji
Inorganic Materials Research Laboratory Ube Industries Ltd.
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