Growth and Properties of PbTiO_3 Thin Films by Photoenhanced Chemical Vapor Deposition : Thin Films
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概要
- 論文の詳細を見る
The photoenhanced chemical vapor deposition (CVD) of PbTiO_3 thin films was carried out using tetraethyl lead, titanium tetraisopropoxide and nitrogen dioxide. The use of NO_2 and UV light irradiation during the growth run affected the crystalline quality and dielectric properties of films. The photodeposited films with a perovskite structure were obtained on sapphire at substrate temperatures above 530℃. In this study, it was found that the photodissociation of NO_2 played an important role in decreasing the growth temperature. The step coverage characteristics of films were also investigated.
- 社団法人応用物理学会の論文
- 1991-09-30
著者
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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FUJIMOTO Masashi
Department of Neurosurgery, Mie University School of Medicine
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Fujimoto Masashi
Department Of Electronics Faculty Of Engineering Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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