Thin Film Growth of Pb(Zr,Ti)O_3 by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO_2
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概要
- 論文の詳細を見る
Ferroelectric Pb(Zr,Ti)O_3 thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD), using Pb(C_2H_5)_4, Zr(O-t-C_4H_9)_4, Ti(O-i-C_3H_7)_4 and NO_2. Both tetragonal and rhombohedral Pb(Zr,Ti)O_3 thin films were obtained at substrate temperatures higher than 535℃. Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the growth rate and film compositional ratio of Zr/(Zr+Ti), and a change in the electrical properties. A decrease in the growth temperature of the Pb(Zr,Ti)O_3 films caused by photoirradiation was observed only when the films were grown at low gas supply ratios of [Zr]/([Zr]+[Ti]). The photodeposited Pb(Zr,Ti)O_3 films obtained showed good ferroelectric properties, good leakage characteristic and good step coverage.
- 社団法人応用物理学会の論文
- 1993-09-30
著者
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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SUGIYAMA Masataka
Department of Electronics, Faculty of Engineering, Kyoto University
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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