Effects of Growth Rate on Properties of Pb(Zr, Ti)O_3 Thin Films Grown by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
The effects of the growth rate on the dielectric and ferroelectric properties are studied using tetragonal Pb(Zr, Ti)O_3 thin films grown by chemical vapor deposition. The growth rates of the films were controlled by changing the carrier flow rates and tank pressures for metallorganic sources. In particular, when the source tank pressures were changed, the growth rates were successfully controlled. The electrical properties of the films were dependent on the growth rate. With reduced growth rate, Pb(Zr, Ti)O_3 films with higher dielectric constants and lower remanent polarizations were obtained. In order to clarify the cause of this effect, changes in the orientation and microstructures of the films were also investigated.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Shiosaki Tadashi
Research Development Division Sakai Chemical Industry Co. Ltd.
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Shiosaki Tadashi
Department Of Electrical Engineering Ii Faculty Of Engineering Kyoto University
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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KATAYAMA Takuma
Department of Applied Chemistry, Faculty of Science, Tokyo University of Science
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Shimizu Masaru
Department Of Chemical Engineering Tokyo University Of Agriculture And Technology
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Shimizu Masaru
Department Of Chemical Engineering Faculty Of Engineering Tokyo University Of Agriculture And Techno
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Katayama Takuma
Department Of Applied Chemistry Faculty Of Science Tokyo University Of Science
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